Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
High DC Current Gain
: hFE= 750(Min) @IC= 3A
Collector Power Dissipation-
: PC= 70W@ TC= 25℃
8 A Continuous Collector Current
Complement to Type BD900
Minimum Lot-to-Lot variations for robust device
performance a
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isc Silicon NPN Darlington Power Transistor
BD899
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= 3A ·Collector Power Dissipation-
: PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD900 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
80
VCEO
Collector-Emitter Voltage
80
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
8
IB
Base Current-Continuous
0.
BD899 Datasheet
