BD899 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation-.
- Part: BD899
- Manufacturer: Inchange Semiconductor (official site)
- Size: 207.89 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Power Innovations Limited |
BD899 | NPN Transistor |
SavantIC |
BD899 | SILICON POWER TRANSISTOR |
|
Power Innovations Limited |
BD899A | NPN Transistor |
Bourns |
BD899A | NPN SILICON POWER DARLINGTONS |
|
SavantIC |
BD899A | SILICON POWER TRANSISTOR |