BD895A Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-.
BD895A is NPN Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Power Innovations Limited |
BD895A | NPN Transistor |
SavantIC |
BD895A | SILICON POWER TRANSISTOR |
Bourns |
BD895A | NPN SILICON POWER DARLINGTONS |
Power Innovations Limited |
BD895 | NPN Transistor |
SavantIC |
BD895 | SILICON POWER TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-.