BD897A Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-.
BD897A datasheet by Inchange Semiconductor.
| Part number | BD897A |
|---|---|
| Datasheet | BD897A-INCHANGE.pdf |
| File Size | 208.05 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
![]() |
BD897A | NPN Transistor | Power Innovations Limited |
![]() |
BD897A | NPN SILICON POWER DARLINGTONS | Bourns |
![]() |
BD897A | SILICON POWER TRANSISTOR | SavantIC |