Inchange Semiconductor BD897
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD897 |
|---|---|
| Datasheet | BD897 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)●High DC Current Gain : hFE= 750(Min) @IC= 3A
●Collector Power Dissipation- : PC= 70W@ TC= 25℃
●8 A Continuous Collector Current
●Complement to Type BD898
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use as complementary AF push-pull output stage applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 IB Base Current-Continuous 0.3 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 2 70 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.79 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Sil...