BD897 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation-.
BD897 is NPN Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Power Innovations Limited |
BD897 | NPN Transistor |
SavantIC |
BD897 | SILICON POWER TRANSISTOR |
Power Innovations Limited |
BD897A | NPN Transistor |
Bourns |
BD897A | NPN SILICON POWER DARLINGTONS |
SavantIC |
BD897A | SILICON POWER TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation-.