BD899A Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-.
BD899A datasheet by Inchange Semiconductor.
| Part number | BD899A |
|---|---|
| Datasheet | BD899A-INCHANGE.pdf |
| File Size | 207.90 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 4A ·Collector Power Dissipation-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD899A | NPN Transistor | Power Innovations Limited |
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BD899A | NPN SILICON POWER DARLINGTONS | Bourns |
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BD899A | SILICON POWER TRANSISTOR | SavantIC |