BD898 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.
BD898 is PNP Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Bourns |
BD898 | PNP Transistor |
| BD898 | Silicon PNP Power Transistors | |
Power Innovations Limited |
BD898A | PNP Transistor |
SavantIC |
BD898A | SILICON POWER TRANSISTOR |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-.