BD895 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation-.
| Part number | BD895 |
|---|---|
| Datasheet | BD895-INCHANGE.pdf |
| File Size | 207.90 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Collector Power Dissipation-.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
![]() |
BD895 | NPN Transistor | Power Innovations Limited |
![]() |
BD895 | SILICON POWER TRANSISTOR | SavantIC |
![]() |
BD895A | NPN Transistor | Power Innovations Limited |