BD909 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Mi

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® BD909/911 BD910/912 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silico

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BD907/909/911 BD908/910/912 COMPLEMENTARY SILICON POWER TRANSISTORS n BD908, BD909, BD910, BD911 AND BD912 SGS-THOMSON PREFERRED SALESTYPES DESCRIPT

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS BD 905, 907, 909, 911 NPN BD906,

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SEMICONDUCTORS BD909 – BD911 SILICON POWER TRANSISTORS The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220 envelope. T

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BD909 / BD911 NPN Complementary Silicon Power Transistors TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Volt

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