BD950 Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistor BD950 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC=

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 7

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isc Silicon PNP Power Transistor BD950F/952F/954F/956F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949F/951F/953F

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