SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / B.
Seme LAB
BDS16 - NPN Transistor
BDS16 BDS16SMD BDS17 BDS17SMD MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SILICON NPN EPITAXIAL BASE IN TO220 METAL.
Seme LAB
BDS16SMD - NPN Transistor
BDS16 BDS16SMD BDS17 BDS17SMD MECHANICAL DATA Dimensions in mm 1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6 SILICON NPN EPITAXIAL BASE IN TO220 METAL.
Inchange Semiconductor
BDS16 - Silicon NPN Power Transistor
NCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BDS16 DESCRIPTION ·High Voltage: VCEV= 120V(Min) ·Low Saturation Vo.
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BDS16 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR
SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M (T0-257AB) Isolated Metal Package • Ideally suited for Power L.
