Inchange Semiconductor
BDY96D - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage
Rating:
1
★
(2 votes)
Seme
BDY96 - Bipolar NPN Device
BDY96
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN
Rating:
1
★
(2 votes)
INCHANGE
BDY96 - NPN Transistor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage
Rating:
1
★
(1 votes)