BF245A Datasheet | Specifications & PDF Download

ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–So

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NXP Semiconductors N-channel silicon field-effect transistors Product specification BF245A; BF245B; BF245C FEATURES  Interchangeability of drain an

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BF244,A,B,C CASE 29-02, STYLE 22 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Fo

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n-channel JFETs designed for • • • • VHF/UHF Amplifiers • Oscillators • Mixers ABSOLUTE MAXIMUM RATINGS (25°C) Drain·Gate Voltage

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BF245A/BF245B/BF245C BF245A/BF245B/BF245C N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. 1 TO-92

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^V£o^[£ii£ju <=5£>ni-L.onaucto'i Lr'iodiJLCtl, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IM-Channel Junction Field-Effect Transistors T

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