BF820 Datasheet | Specifications & PDF Download

BYD Microelectronics Co., Ltd. BF8205E Dual N-Channel MOSFET General Description The BF8205E is a dual N-channel MOS Field Effect Transistor, which

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NPN High-Voltage Transistors FEATURES  Low current(max.50mA).  High voltage(max.300V).  Complements:BF821,BF823. Pb Lead-free APPLICATIONS  Tel

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BF820, BF822 Small Signal Transistors (NPN) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ NPN Silicon Epitaxial Planar Transistors Top View .0

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DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP S

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DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Sem

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BF8205T BYD Microelectronics Co., Ltd. Dual N-Channel MOSFET General Description The BF8205T is a dual N-channel MOS Field Effect Transistor, Which

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BF820/BF822 TRANSISTOR (NPN) SOT-23 FEATURES z Low curren

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BF820 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features ，。 Low current, h

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TRANSISTOR (NPN) FEATURES z Low current (max.50 mA) z High voltage (max.300V) z Telephony and professional communication equipment. BF8 20/ BF8 22 SO

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SMD Type Transistors NPN High-Voltage Transistors BF820,BF822 Features Low current (max. 50 mA) High voltage (max. 300 V). +0.12.4 -0.1 SOT-23 2.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL T

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