BF8205T Dual N-Channel MOSFET

BYD Microelectronics

Description

BF8205T BYD Microelectronics Co., Ltd.Dual N-Channel MOSFET General .
The BF8205T is a dual N-channel MOS Field Effect Transistor, Which is applied to electronic systems as a power switch. VDS (V) =2.

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Datasheet Specifications

Part number: BF8205T
Manufacturer: BYD Microelectronics
File Size: 209.57 KB
Datasheet: BF8205T-BYDMicroelectronics.pdf
Description: Dual N-Channel MOSFET

Features

* 
* VDS (V) =20V
* Low on-state resistance RDS(on) ≤ 22.0mΩ TYP(VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 32.0mΩ TYP(VGS = 2.5V, ID = 3.0A) Absolute Maximum Ratings (Tc = 25℃) Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren

Applications

* (personal equipment, office equipment, domestic appliances, etc. ). These BME products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintende

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BF8205T Dual N-Channel MOSFET BYD Microelectronics

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