BF8205E Dual N-Channel MOSFET

BYD

Description

BYD Microelectronics Co., Ltd.BF8205E Dual N-Channel MOSFET General .
The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low gate charge and.

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Datasheet Specifications

Part number: BF8205E
Manufacturer: BYD
File Size: 385.36 KB
Datasheet: BF8205E-BYD.pdf
Description: Dual N-Channel MOSFET

Features

* z VDS =20 V z ID =6A z Low on-state resistance Fast switching RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A) RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A) z Built-in G-S protection diode against ESD. z Lead Pb-free and Halogen-free S1 D1/D2 S2 Absolute Maximum Ratings (T

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BF8205E Dual N-Channel MOSFET BYD

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