BF8205E Datasheet, Mosfet, BYD

BF8205E Features

  • Mosfet z VDS =20 V z ID =6A z Low on-state resistance Fast switching RDS(on) ≤ 22mΩ (VGS = 4.5V, ID = 3.0A) RDS(on) ≤ 24mΩ (VGS = 3.8V, ID = 3.0A) RDS(on) ≤ 32mΩ (VGS = 2.5V, ID = 3.0A) z B

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Part number:

BF8205E

Manufacturer:

BYD

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385.36kb

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📄 Datasheet

Description:

Dual n-channel mosfet. The BF8205E is a dual N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(on) , low

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TAGS

BF8205E
Dual
N-Channel
MOSFET
BYD

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