BFP540 Datasheet | Specifications & PDF Download

Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier • Outstanding Gms = 21.5 dB at 1.8 GHz Minimum noise figure NFmin =

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BFP540FESD Low profile robust silicon NPN RF bipolar transistor Product description The BFP540FESD is a low noise device based on a grounded emitter

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Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • High ESD robustness typical value 1000 V (HBM) • Outstandi

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BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • Gold metalliza

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www.DataSheet4U.com Ordering number : ENN7412 SBFP540D NPN Epitaxial Planar Silicon Transistor SBFP540D UHF to C Band Low Noise Amplifier, Oscillati

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www.DataSheet4U.com Ordering number : ENN7436 SBFP540B NPN Epitaxial Planar Silicon Transistor SBFP540B UHF to C Band Low Noise Amplifier, Oscillati

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www.DataSheet4U.com Ordering number : ENN7494A SBFP540M NPN Epitaxial Planar Silicon Transistor SBFP540M Features • • UHF to C Band Low Noise Ampl

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