BFR35AP Datasheet | Specifications & PDF Download

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 12.5 dB TYP. @VC

Rating: 1 ★ (2 votes)

BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD:

Rating: 1 ★ (1 votes)

Low Noise Silicon Bipolar RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA

Rating: 1 ★ (1 votes)