BFR35AP Datasheet | Specifications & PDF Download

isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 12.5 dB TYP. @VC

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BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD:

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Low Noise Silicon Bipolar RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA

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