BLP Datasheet | Specifications & PDF Download

BLP05N08G Step-Down Converter 1．Description , BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology wh

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BC847BLP 45V NPN SMALL-SIGNAL TRANSISTOR IN X1-DFN1006-3 Features • BVCEO > 45V • IC = 100mA High Collector Current • PD = 1000mW Power Dissipation •

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BLP9G0722-20; BLP9G0722-20G Power LDMOS transistor Rev. 3 — 26 February 2018 Product data sheet 1. Product profile 1.1 General description 20 W pla

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BC857BLP4 45V PNP SMALL-SIGNAL TRANSISTOR IN X2-DFN1006-3 Features • BVCEO > -45V • IC = -100mA High Collector Current • PD = 1W Power Dissipation •

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www.DataSheet4U.com BLP7272 PN Si Si ，。 • • ： PN ： AlSi Anode P ：7.2 mm × 7.2 mm ：300±25µm Cathode N N P N N ： PN ：AlSi http://w

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BC847BLP4 45V NPN SMALL-SIGNAL TRANSISTOR IN X2-DFN1006-3 Features • BVCEO > 45V • IC = 100mA High Collector Current • PD = 1000mW Power Dissipation

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BLP02N08 MOSFET 1．Description Step-Down Converter BLP02N08, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench techno

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BLP03N10 MOSFET Step-Down Converter 1．Description , BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolo

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BLP9G0722-20; BLP9G0722-20G Power LDMOS transistor Rev. 3 — 26 February 2018 Product data sheet 1. Product profile 1.1 General description 20 W pla

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OLED SPECIFICATION Model No: WEO012864BLPP3N00000 1 ， 21 Free Datasheet http://www.datasheet4u.net/ 2 ， 21 Free Datasheet http://www.datashee

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BLP8G21S-160PV Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for

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BC846BLP4 65V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Low Collector-Emitter Saturation Voltage, VCE(sat) • Ultra-Small Leadless Surface

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QBLP675-XX Series 2014 PLCC2 LED -------------------------------------------------------------------------------------------------------------------

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BLP042N10G MOSFET Step-Down Converter 1．Description BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ techn

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BLP10H690P; BLP10H690PG Power LDMOS transistor Rev. 1 — 20 December 2016 Product data sheet 1. Product profile 1.1 General description A 90 W LDMO

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BLP05H6250XR; BLP05H6250XRG Power LDMOS transistor Rev. 4 — 21 September 2016 Product data sheet 1. Product profile 1.1 General description A 250 W

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BLP05H6150XR; BLP05H6150XRG Power LDMOS transistor Rev. 4 — 21 September 2016 Product data sheet 1. Product profile 1.1 General description A 150 W

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HM9264B Series 64 k SRAM (8-kword × 8-bit) ADE-203-618C (Z) Rev. 3.0 Nov. 1997 Description The Hitachi HM9264B is 64k-bit static RAM organized 8-kwor

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HM9264B Series 64 k SRAM (8-kword × 8-bit) ADE-203-618C (Z) Rev. 3.0 Nov. 1997 Description The Hitachi HM9264B is 64k-bit static RAM organized 8-kwor

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ISL9N7030BLP3, ISL9N7030BLS3ST Data Sheet January2002 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET® Trench Power MOSFETs This device employs a

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