BLP05N08G (BELLING)
N-channel Enhanced Power MOSFET
BLP05N08G
Step-Down Converter
1．Description
,
BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology wh
(59 views)
BLP9G0722-20G (Ampleon)
Power LDMOS transistor
BLP9G0722-20; BLP9G0722-20G
Power LDMOS transistor
Rev. 3 — 26 February 2018
Product data sheet
1. Product profile
1.1 General description
20 W pla
(33 views)
BLP0427M9S20G (Ampleon)
Power LDMOS transistor
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Rev. 1 — 16 January 2018
Product data sheet
1. Product profile
1.1 General description
20 W plas
(32 views)
BC847BLP (Diodes Incorporated)
45V NPN SMALL-SIGNAL TRANSISTOR
BC847BLP
45V NPN SMALL-SIGNAL TRANSISTOR IN X1-DFN1006-3
Features
• BVCEO > 45V • IC = 100mA High Collector Current • PD = 1000mW Power Dissipation •
(29 views)
BLP0240 (SHANGHAI BELLING)
Si PIN junction photodiode
www.DataSheet4U.com
BLP0240
PIN Si
Si ， 。
•
•
： PIN ： AlSi
Anode Cathode
N
P
：1.0 mm × 1.0 mm ：300±25µm
N P
N
N
： PIN ：AlSi
http
(29 views)
BLP023N10 (BELLING)
MOSFET
BLP023N10
MOSFET
1．Description
Step-Down Converter
BLP023N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech
(29 views)
BLP03N10 (BELLING)
MOSFET
BLP03N10
MOSFET
Step-Down Converter
1．Description
,
BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolo
(29 views)
BLP038N15 (BELLING)
MOSFET
BLP038N15
MOSFET
1．Description
Step-Down Converter
BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolog
(28 views)
BLP02N08 (BELLING)
MOSFET
BLP02N08
MOSFET
1．Description
Step-Down Converter
BLP02N08, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
techno
(28 views)
BLP05H6110XRG (Ampleon)
Power LDMOS transistor
BLP05H6110XR; BLP05H6110XRG
Power LDMOS transistor
Rev. 4 — 30 August 2016
Product data sheet
1. Product profile
1.1 General description
A 110 W ex
(27 views)
BLP042N10G (BELLING)
MOSFET
BLP042N10G
MOSFET
Step-Down Converter
1．Description
BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ
techn
(27 views)
BLP0427M9S20 (Ampleon)
Power LDMOS transistor
BLP0427M9S20; BLP0427M9S20G
Power LDMOS transistor
Rev. 1 — 16 January 2018
Product data sheet
1. Product profile
1.1 General description
20 W plas
(26 views)
BLP021N10 (BELLING)
MOSFET
BLP021N10
MOSFET
1．Description
Step-Down Converter
BLP021N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech
(26 views)
WEO012864BLPP3N00000 (Winstar)
OLED Display
OLED SPECIFICATION
Model No:
WEO012864BLPP3N00000
1 ， 21
Free Datasheet http://www.datasheet4u.net/
2 ， 21
Free Datasheet http://www.datashee
(25 views)
BLP04N11 (BELLING)
MOSFET
BLP04N11
MOSFET
1．Description
BLP04N11, the N-channel EnhSatnecepd-DPoowwenr Converter
MOSFETs, is obtained by advanced double trench Ⅱ
,
technol
(25 views)
BLP038N10GL (BELLING)
MOSFET
BLP038N10GL
MOSFET
Step-Down Converter
1．Description
,
BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te
(25 views)
BLP05H6250XR (Ampleon)
Power LDMOS transistor
BLP05H6250XR; BLP05H6250XRG
Power LDMOS transistor
Rev. 4 — 21 September 2016
Product data sheet
1. Product profile
1.1 General description
A 250 W
(24 views)
BLP05H6110XR (Ampleon)
Power LDMOS transistor
BLP05H6110XR; BLP05H6110XRG
Power LDMOS transistor
Rev. 4 — 30 August 2016
Product data sheet
1. Product profile
1.1 General description
A 110 W ex
(24 views)
DESD3V3S1BLP3 (Diodes)
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
ADVANCE INFORMATION
Features
Ultra-Small, Low Profile Leadless Surface Mount Package (0.6 x 0.3 x 0.3mm)
Provides ESD Protection per IEC 61000-4-
(24 views)
BLP05H6250XRG (Ampleon)
Power LDMOS transistor
BLP05H6250XR; BLP05H6250XRG
Power LDMOS transistor
Rev. 4 — 21 September 2016
Product data sheet
1. Product profile
1.1 General description
A 250 W
(23 views)
