Diodes
DP0150BLP4 - 50V PNP SMALL SIGNAL TRANSISTOR
NEW PRODUCT
Features
BVCEO > -50V IC = -100mA High Collector Current PD = 1000mW Power Dissipation 0.60mm2 Package Footprint, 13 times Smalle
(15 views)
Diodes Incorporated
BC857BLP - PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
www.DataSheet4U.com
SPICE MODEL: BC857BLP
Lead-free Green
BC857BLP
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
• • • • •
Ep
(12 views)
NXP
BLP8G20S-80P - Power LDMOS transistor
BLP8G20S-80P
Power LDMOS transistor
Rev. 2 — 13 October 2014 Product data sheet
1. Product profile
1.1 General description
80 W LDMOS transistor for
(11 views)
Ampleon
BLP05H9S500P - Power LDMOS transistor
BLP05H9S500P
Power LDMOS transistor
Rev. 1 — 10 September 2019
Product data sheet
1. Product profile
1.1 General description
500 W LDMOS power tran
(11 views)
Ampleon
BLP10H630P - Power LDMOS transistor
BLP10H630P; BLP10H630PG
Power LDMOS transistor
Rev. 1 — 20 December 2016
Product data sheet
1. Product profile
1.1 General description
A 30 W LDMO
(9 views)
QT-Brightek
QBLP655 - 1205 LED
QBLP655 series
1205 LED
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(9 views)
Ampleon
BLP10H6120P - Power LDMOS transistor
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
Rev. 1 — 20 December 2016
Product data sheet
1. Product profile
1.1 General description
A 120 W L
(8 views)
Ampleon
BLP05H6700XR - Power LDMOS transistor
BLP05H6700XR; BLP05H6700XRG
Power LDMOS transistor
Rev. 2 — 13 September 2018
Product data sheet
1. Product profile
1.1 General description
A 700 W
(8 views)
Ampleon
BLP8G05S-200 - Power LDMOS transistor
BLP8G05S-200; BLP8G05S-200G
Power LDMOS transistor
Rev. 2 — 1 October 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMO
(8 views)
Analog Devices
HMC542BLP4E - 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL SERIAL CONTROL ATTENUATOR
Attenuators - Digital - SMT
HMC542BLP4E
v00.1212
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL SERIAL CONTROL ATTENUATOR, DC - 4 GHz
Typical Applications
The H
(8 views)
SHANGHAI BELLING
BLP4040 - PN junction Si photocell
www.DataSheet4U.com
BLP4040
PN Si
Si ,。
•
•
: PN : AlSi
Anode P
:4.0 mm × 4.0 mm :300±25µm
Cathode
N
N P
N
N
: PN :AlSi
http://w
(8 views)
NXP
BLP8G27-10 - Power LDMOS transistor
BLP8G27-10
Power LDMOS transistor
Rev. 1 — 24 August 2015
Product data sheet
1. Product profile
1.1 General description
10 W plastic LDMOS power tr
(8 views)
Diodes
SBR05M100BLP - SUPER BARRIER RECTIFIER
Features
• Ultra Low Leakage Current • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capab
(8 views)
QT-Brightek
QBLP653 - 1208 LED
QBLP653 Series
1208 LED
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(8 views)
QT-Brightek
QBLP675-R - 2014 PLCC2 LED
QBLP675-XX Series
2014 PLCC2 LED
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(8 views)
BELLING
BLP05N08G - N-channel Enhanced Power MOSFET
BLP05N08G
Step-Down Converter
1.Description
,
BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology wh
(8 views)
BELLING
BLP023N10 - MOSFET
BLP023N10
MOSFET
1.Description
Step-Down Converter
BLP023N10, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
tech
(8 views)
BELLING
BLP038N15 - MOSFET
BLP038N15
MOSFET
1.Description
Step-Down Converter
BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolog
(8 views)
BELLING
BLP02N08 - MOSFET
BLP02N08
MOSFET
1.Description
Step-Down Converter
BLP02N08, the N-channel Enhanced Power
,
MOSFETs, is obtained by advanced double trench
techno
(8 views)
BELLING
BLP038N10GL - MOSFET
BLP038N10GL
MOSFET
Step-Down Converter
1.Description
,
BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te
(8 views)