BU2508 Datasheet | Specifications & PDF Download

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508DF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High v

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508DX www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High v

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www.DataSheet4U.com Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performa

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508AF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High v

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GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ●Surge overload rating -350 amperes peak ● Ideal for printed circuit board ●Reliable low cost construction

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508A www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High vol

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isc Silicon NPN Power Transistor BU2508AX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum

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www.vishay.com BU2506, BU2508, BU2510 Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers + ~~ isoCink+™ Case Style BU - ~~+ +~~ -

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508DX GENERAL DESCRIPTION Enhanced performance, new generation,

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GBU25005 ~ GBU2510 Elektronische Bauelemente 50 V ~ 1000 V 25.0 Amp High Current Glass Passivated Molding Single-Phase Bridge Rectifier RoHS Compliant

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2508AX www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High v

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KBU 10A/15A/25A/35A SERIES SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS CHENG- YI ELECTRONIC REVERSE VOLTAGE -50 to 1000 Volts FORWAR

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isc Silicon NPN Power Transistor BU2508DW DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in

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MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AW GENERAL DESCRIPTION Enhanced performance, new generation,

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isc Silicon NPN Power Transistor BU2508DX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in

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isc Silicon NPN Power Transistor BU2508DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in

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isc Silicon NPN Power Transistor BU2508AW DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum

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isc Silicon NPN Power Transistor BU2508AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum

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isc Silicon NPN Power Transistor BU2508A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum L

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