Philips Semiconductors Product specification Sil.
BU508DF - Silicon Diffused Power Transistor
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn .BU508DFI - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
® BU208D BU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES HIGH VOLTAG.BU508DF - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508DF www.datasheet4u.com DESCRIPTION ·With TO-3PFa package ·High vo.BU508DF - SILICON DIFFUSED POWER TRANSISTORS
SEMICONDUCTORS NPN BU508DF SILICON DIFFUSED POWER TRANSISTOR The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated efficie.BU508DF - SILICON DIFFUSED POWER TRANSISTORS
NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode f.BU508DF - NPN POWER TRANSISTORS
Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN POWER TRANSISTORS BU508F, BU50.BU508DF - NPN POWER TRANSISTORS
Transys Electronics L I M I T E D NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package www.DataSheet4U.com C B E .BU508DFI - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU508DFI www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·High v.BU508DFI - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage-VCES= 1500V(Min.) ·Collector Current- IC = 8.0A ·Built-in Damper Diode ·Minimum Lot-to-Lot.