isc Silicon NPN Power Transistor DESCRIPTION ·Hi.
Rectron Semiconductor
RBU607M - SILICON BRIDGE RECTIFIER
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes RBU601M THRU RBU607M FEATURES * Low leakag.
Taiwan Semiconductor
GBU607 - Glass Passivated Single-Phase Bridge Rectifier
GBU601 – GBU607 Taiwan Semiconductor 6A, 50V - 1000V Standard Bridge Rectifier FEATURES ● AEC-Q101 qualified available ● Ideal for printed circuit b.
LGE
GBU607 - Glass Passivated Bridge Rectifiers
GBU601-GBU607 Single Phase 6.0AMP.Glass Passivated Bridge Rectifiers GBU Features Ideal for printed circuit board Reliable low cost construction Pla.
Taiwan Semiconductor
KBU607 - Silicon Bridge Rectifiers
KBU601 THRU KBU607 Single Phase 6.0 AMPS. Silicon Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 6.0 Amperes Features UL Recognized File .
Inchange Semiconductor
BU607 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(s.
Inchange Semiconductor
BU607D - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(s.
GW
GBU607 - SINGLE PHASE 6.0 AMP BRIDGE RECTIFIERS
GBU601 THRU GBU607 SINGLE PHASE 6.0 AMP BRIDGE RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes FEATURES * Ideal for printed circuit b.
Taiwan Semiconductor
KBU607G - Glass Passivated Bridge Rectifiers
KBU601G thru KBU607G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed ci.