BU607D Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

BU607D

Manufacturer:

Inchange Semiconductor

File Size:

207.48kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor.

BU607D Application

• Applications
• Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

TAGS

📁 Related Datasheet

BU607 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(s.

BU603 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 550V(Min) ·High Switching Speed ·Minimum Lot-to-Lot.

BU606 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(s.

BU606D - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Fast Switching Speed- : tf= 0.75μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A ·Built-i.

BU608 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BU608 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Low Saturation Voltage- :.

BU608 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU608 .. DESCRIPTION ·With TO-3 package ·High voltage.

BU6084B - Bipolar Junction Transistor (Jingdao)
R .jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU6084B Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided pow.

BU6084BF - Bipolar Junction Transistor (Jingdao)
R .jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU6084BF Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided po.

BU608D - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Low Saturation Voltage- : VCE(sa.

BU61588 - Miniature Advanced Communication Engine and Mini-Ace Plus (Data Device)
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .