BU607D - Silicon NPN Power Transistor
*High Voltage: VCEV= 330V(Min) *Fast Switching Speed- : tf= 0.75μs(Max) *Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use in horizontal deflection output stage
