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BU606D NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Fast Switching Speed- : tf= 0. Low Saturation Voltage- : VCE(sat)= 1. Built-in Damper Diode. Minimum Lot-to.

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Datasheet Specifications

Part number
BU606D
Manufacturer
INCHANGE
File Size
201.48 KB
Datasheet
BU606D-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V

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