BU607 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Voltage: VCEV= 330V(Min). Fast Switching Speed- : tf= 0. Low Saturation Voltage- : VCE(sat)= 1. Minimu.

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Datasheet Specifications

Part number: BU607
Manufacturer: Inchange Semiconductor
File Size: 205.97 KB
Datasheet: BU607_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V

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