BU6084BF
Jingdao
117.24kb
Bipolar junction transistor.
TAGS
📁 Related Datasheet
BU6084B - Bipolar Junction Transistor
(Jingdao)
R
.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
BU6084B
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1.APPLICATION
Computer aided pow.
BU608 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BU608
DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed-
: tf= 0.5μs(Max) ·Low Saturation Voltage-
:.
BU608 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU608
..
DESCRIPTION ·With TO-3 package ·High voltage.
BU608D - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed-
: tf= 0.5μs(Max) ·Low Saturation Voltage-
: VCE(sa.
BU603 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 550V(Min) ·High Switching Speed ·Minimum Lot-to-Lot.
BU606 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed-
: tf= 0.75μs(Max) ·Low Saturation Voltage-
: VCE(s.
BU606D - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Fast Switching Speed-
: tf= 0.75μs(Max) ·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A ·Built-i.
BU607 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed-
: tf= 0.75μs(Max) ·Low Saturation Voltage-
: VCE(s.
BU607D - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed-
: tf= 0.75μs(Max) ·Low Saturation Voltage-
: VCE(s.
BU61588 - Miniature Advanced Communication Engine and Mini-Ace Plus
(Data Device)
w
w
a D . w
S a t
e e h
U 4 t
m o .c
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
w
w
w
.D
a
S a t
e e h
U 4 t
m o .c
.