BU626A NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min. Low Collector-Emitter Saturation Voltage- : VCE(sat) = 3.

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Datasheet Specifications

Part number: BU626A
Manufacturer: INCHANGE
File Size: 202.03 KB
Datasheet: BU626A-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in power supply units of TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Cu

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