BU941Z Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZP3 BVCEO IC VCESAT(MAX) Spec. No. : C660P3 Issued Date : 2008.07.22 Revised Date :2

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZF3 Spec. No. : C660F3 Issued Date : 2010.10.01 Revised Date : 2015.09.04 Page No. : 1

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CYStech Electronics Corp. Spec. No. : C660E3 Issued Date : 2014.01.09 Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZLE3 BVCEO

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature ·Minimum Lot-to-Lot variations

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZFP Spec. No. : C660FP Issued Date : 2008.05.20 Revised Date : Page No. : 1/5 Feature

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZR3 BVCEO IC VCESAT(MAX) Spec. No. : C660R3 Issued Date : 2016.11.02 Revised Date :

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® BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER H

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BU941ZP BU941ZPFI High voltage ignition coil driver NPN power Darlington transistors Features ■ Very rugged bipolar technology ■ Built in clamping Ze

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® BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZEN

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CYStech Electronics Corp. NPN Epitaxial Planar Transistor BU941ZNF3 Spec. No. : C660F3 Issued Date : 2010.10.01 Revised Date : 2015.09.04 Page No. :

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CYStech Electronics Corp. Spec. No. : C660E3 Issued Date : 2010.02.03 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZE3 BVCEO

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BU941ZP BU941ZPFI High voltage ignition coil driver NPN power Darlington transistors Features ■ Very rugged bipolar technology ■ Built in clamping Ze

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU941ZPFI www.datasheet4u.com DESCRIPTION ·With TO-3PML package ·DARLI

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UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION COIL DRIVER  FEATURES * NPN Darlington *

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isc Silicon NPN Power Transistor BU941ZT DESCRIPTION ·High Voltage ·DARLINGTON ·Minimum Lot-to-Lot variations for robust device performance and reli

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min.) ·High Reliability ·Low Collect

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® BU941ZT/BU941ZTFP BUB941ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON s s s s s VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZEN

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