LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 .
BUL52A - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Collector Saturation Voltage : VCE(sat) .BUL52 - NPN Transistor
LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.BUL52AFI - NPN Transistor
LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL52AFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 D.BUL52B - NPN Transistor
LAB MECHANICAL DATA Dimensions in mm 10.2 1.3 4.5 SEME BUL52B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR.BUL52BFI - NPN Transistor
LAB MECHANICAL DATA Dimensions in mm 10.2 SEME BUL52BFI ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 D.BUL52B - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BUL52B www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High vol.