isc Silicon NPN Power Transistors BUS23/A DESCRI.
BUS23B - Bipolar NPN Device
BUS23B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.BUS23 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistors BUS23/A DESCRIPTION · High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V (Min)-BUS2.BUS23C - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS23B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sus.BUS23A - Silicon NPN Power Transistor
isc Silicon NPN Power Transistors BUS23/A DESCRIPTION · High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V (Min)-BUS2.BUS23B - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS23B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sus.PG05BUS23 - TVS Diode
SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 300 Watts peak pulse power (tp=8/20 s) Transient protection for.PG12BUS23 - TVS Diode
SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 300 Watts peak pulse power (tp=8/20 s) Transient protection for.PG24BUS23 - TVS Diode
SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 300 Watts peak pulse power (tp=8/20 s) Transient protection for.