BUS23 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistors BUS23/A DESCRIPTION · High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V (Min)-BUS2

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BUS23B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN

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isc Silicon NPN Power Transistors BUS23/A DESCRIPTION · High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V (Min)-BUS2

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INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS23B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sus

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INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS23B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sus

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SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 300 Watts peak pulse power (tp=8/20 s) Transient protection for

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SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 300 Watts peak pulse power (tp=8/20 s) Transient protection for

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SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. FEATURES 300 Watts peak pulse power (tp=8/20 s) Transient protection for

(2 views)