® BUV61 HIGH POWER NPN SILICON TRANSISTOR s s s.
Seme LAB
BUV61 - Bipolar NPN Device
BUV61 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN D.
STMicroelectronics
BUV61 - HIGH POWER NPN SILICON TRANSISTOR
® BUV61 HIGH POWER NPN SILICON TRANSISTOR s s s s NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICA.
Inchange Semiconductor
BUV61 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BUV61 DESCRIPTION ·High Current Capability ·Fully characterized at 125℃ ·Fast switching speed ·Motor control ·Minim.
