BUZ101 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor BUZ101 FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resi

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BUZ 101L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operatin

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BUZ 101 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature •

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Preliminary data BUZ 101 S SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating tempe

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Preliminary data BUZ 101SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 10

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BUZ 101 SL SPP20N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating tempe

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