BUZ 101 SIPMOS ® Power Transistor • N channel.
Siemens Semiconductor Group
BUZ101L - Power Transistor
BUZ 101L SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operatin.
Siemens Semiconductor Group
BUZ101S - Power Transistor
Preliminary data BUZ 101 S SPP22N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating tempe.
Siemens Semiconductor Group
BUZ101SL - Power Transistor
BUZ 101 SL SPP20N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating tempe.
Siemens Semiconductor Group
BUZ101SL-4 - Power Transistor
Preliminary data BUZ 101SL-4 SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type BUZ 10.
Siemens
BUZ101 - Power Transistor
BUZ 101 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature •.
Inchange Semiconductor
BUZ101 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor BUZ101 FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 50V(Min) ·Static Drain-Source On-Resi.