C2063 Datasheet | Specifications & PDF Download

ADVANCE INFORMATION A Product Line of Diodes Incorporated ZXTC2063E6 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features  NPN + PNP Combina

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LTC2063/LTC2064/LTC2065 2µA Supply Current, Low IB, Zero-Drift Operational Amplifiers FEATURES n Low Supply Current: 2μA Maximum (per Amplifier) n O

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CapSense Applications Features ■ ■ CY8C20X36/46/66/96 ® 1.71V to 5.5V Operating Range Low Power CapSense Block ❐ Configurable Capacitive Sensing Ele

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LTC2063/LTC2064/LTC2065 2µA Supply Current, Low IB, Zero-Drift Operational Amplifiers FEATURES n Low Supply Current: 2μA Maximum (per Amplifier) n O

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CapSense Applications CY8C20X36A/46A/66A/96A ® Features ■ ■ 1.71V to 5.5V Operating Range Low Power CapSense™ Block ❐ Configurable Capacitive Sensi

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CY8C20xx7/S 1.8 V CapSense® Controller with SmartSense™ Auto-tuning 31 Buttons, 6 Sliders, Proximity Sensors 1.8 V CapSense® Controller with SmartSen

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CY8C20134, CY8C20234, CY8C20334 CY8C20434, CY8C20534, CY8C20634 PSoC® Programmable System-on-Chip™ PSoC® Programmable System-on-Chip™ Features ■ Low

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CY8C20xx7/S 1.8 V CapSense® Controller with SmartSense™ Auto-tuning 31 Buttons, 6 Sliders, Proximity Sensors 1.8 V CapSense® Controller with SmartSen

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SC2063/4 www.semiment.com Ultra-Low-Power Ominipolar Switch Hall Effect Sensor FEATURES  Industry ultra-low power consumption - 1.2 µA with 3.0 V 

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CHIP FUSES; RECTANGULAR TYPE KAMAYA OHM FCC FHC Features ¥ 1. Fast-Acting Type 2. Suitable for over-current protection of the circuit of miniture p

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Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz Features • GaN on SiC HEMT Technology • Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pu

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