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C2669 Datasheet, Features, Application

C2669 2SC2669

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial P.

Toshiba Semiconductor

C2669 - 2SC2669

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm · High power gain.
1.0 · rating-1
Toshiba Semiconductor

2SC2669 - TRANSISTOR

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm · High power gain.
1.0 · rating-1
Samsung semiconductor

KSC2669 - NPN Epitaxial Silicon Transistor

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1.0 · rating-1
Fairchild Semiconductor

KSC2669 - NPN Epitaxial Silicon Transistor

KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz (TYP.) 1 TO-92S 1.Emitter 2. Collector 3.
1.0 · rating-1
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