TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT.
Tyco Electronics
FDC2710 - Open Carrier Frequency Doubler
Open Carrier Frequency Doubler For Microwave Telecommunications Features • • • • INPUT: 3.5 TO 8.0 GHz OUTPUT: 7.0 TO 16.0 GHz INPUT DRIVE LEVEL +10 d.
Toshiba Semiconductor
2SC2710 - Silicon NPN TRANSISTOR
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 2SC2710 For Audio Amplifier Applications Unit: mm · High DC current gain: hFE .
Tyco Electronics
MC2710 - Open Carrier Double-Balanced Mixer
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BLUE ROCKET ELECTRONICS
2SC2710 - Silicon NPN transistor
2SC2710 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features , 2SA1150 。 High DC.
NEC
UPC2710T - 1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
1.5 GHz SILICON MMIC UPC2710T WIDE-BAND AMPLIFIER UPC2713T FEATURES • FREQUENCY RESPONSE: 1.5 GHz • HIGH GAIN: 33 dB (UPC2710T) Gain, GS (dB) • SATURA.
Unitrode
UC2710 - High Current FET Driver
High Current FET Driver UC1710 UC2710 UC3710 FEATURES • Totem Pole Output with 6A Source/Sink Drive • 3ns Delay • 20ns Rise and Fall Time into 2.2nF.
Renesas
uPC2710TB - SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710TB is a .
DIODES
DMC2710UDWQ - MOSFET
DMC2710UDWQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 BVDSS 20V -20V RDS(ON) MAX 0.45Ω @ VGS = 4.5V 0.6Ω @ VGS = 2.5.
Fairchild Semiconductor
KSC2710 - Low Frequency Power Amplifier
KSC2710 KSC2710 Low Frequency Power Amplifier • Complement to KSA1150 • Collector Dissipation : PC=300mW 1 TO-92S 1.Emitter 2. Collector 3. Base .
CEL
UPC2710TB - SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
DISCONTINUED DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µ.
Toshiba
C2710 - 2SC2710
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 2SC2710 For Audio Amplifier Applications Unit: mm · High DC current gain: hFE .
DIODES
DMC2710UV - MOSFET
DMC2710UV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 BVDSS 20V -20V RDS(ON) 0.4Ω @ VGS = 4.5V 0.5Ω @ VGS = 2.5V 0.7Ω .
DIODES
DMC2710UVQ - MOSFET
ADVANCED INFORMATION DMC2710UVQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 BVDSS 20V -20V RDS(ON) 0.4Ω @ VGS = 4.5V .
DIODES
DMC2710UDW - COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
NEW PRODUCT YM DMC2710UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 Q2 BVDSS 20V -20V RDS(on) MAX 0.45Ω @ VGS = 4.5V 0.
