C3298 Datasheet | Specifications & PDF Download

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C3298 Silicon Power Transistors

www.DataSheet4U.com Product Specification www.jm.

Toshiba Semiconductor

C3298B - SILICON NPN EPITAXIAL TYPE

 www.DataSheet4U.com www.DataSheet4U.com .
Rating: 1 ★ (3 votes)
INCHANGE

2SC3298A - NPN Transistor

 isc Silicon NPN Power Transistors 2SC3298/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3.
Rating: 1 ★ (3 votes)
INCHANGE

2SC3298 - NPN Transistor

 isc Silicon NPN Power Transistors 2SC3298/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3.
Rating: 1 ★ (3 votes)
Toshiba

2SC3298 - Silicon NPN Transistor

 : 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES .
Rating: 1 ★ (2 votes)
Motorola

2SC3298B - COMPLEMENTARY SILICON POWER TRANSISTORS

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Rating: 1 ★ (2 votes)
JMnic

C3298 - Silicon Power Transistors

 www.DataSheet4U.com Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION ¡¤ With TO-220Fa package .
Rating: 1 ★ (2 votes)
INCHANGE

2SC3298B - NPN Transistor

 isc Silicon NPN Power Transistors DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Complement to Ty.
Rating: 1 ★ (2 votes)
Toshiba

2SC3298A - Silicon NPN Transistor

 : 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES .
Rating: 1 ★ (1 votes)
Toshiba Semiconductor

2SC3298B - Silicon NPN Transistor

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Rating: 1 ★ (1 votes)
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