C3631 Datasheet | Specifications & PDF Download

Silicon Power Transistors 2SC3631,3631-Z NPN VCEO 400 V tf 0.7 μs TA = 25°C VCBO VCEO VEBO 2 IC(DC) 1 IC(pulse) PT ジャンクション Tj Tstg 1. PW

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SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING. FEATURES Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) at (IC=0.5A). High Switching Spee

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LTC3631 High Efficiency, High Voltage 100mA Synchronous Step-Down Converter Features Description n Wide Input Voltage Range: Operation from 4.5V t

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3631-Z DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collecto

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING. FEATURES Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) at (IC=0.5A). High Switching Spee

(15 views)