* High Voltage VCEO = 400 V
* High Speed tf < 0.7 μs
* Complement to 2SA1412-Z Note 5.6 ±0.3 9.5 ±0.5 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Ba
2SC3631-Z Datasheet (668.33 KB)
2SC3631-Z
668.33 KB
Silicon power transistor.
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
📁 Related Datasheet
2SC3631-Z - NPN Transistor
(NEC)
.
2SC3631-Z - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3631-Z
DESCRIPTION ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collecto.
2SC3631 - NPN SILICON TRIPLE DIFFUSED TRANSISTOR
(NEC)
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
2SC3630 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR
(Mitsubishi Electric Semiconductor)
.
2SC3632 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Voltage ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to.
2SC3632-Z - NPN Transistor
(NEC)
.
2SC3632-Z - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3632-Z
DESCRIPTION ·With TO-252(DPAK) packaging ·High collector-emitter voltage ·Low coll.
2SC3632-Z - NPN Transistor
(Guangdong Kexin)
SMD Type
NPN Silicon Epitaxial Transistor 2SC3632-Z
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
+0.15 6.50-0.15 +0.2 5.
