* Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
* High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC3356 2SC3356-T1B Order Number 2SC3356-A 2SC3356-T1B-A Package Quantit
2SC3356
176.69 KB
Npn silicon rf transistor.
PreliminaryData Sheet
2SC3356
R09DS0021EJ0300
NPN Silicon RF Transistor
Rev.3.00
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Ampl.
📁 Related Datasheet
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·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation .
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DESCRIPTION ·With TO-220Fa package ·High vo.
2SC3352 - NPN Transistor
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2SC3352, 2SC3352A
して、として、いますを
s
q q q q
s
s
*VCEO(sus)
(TC=25˚C)
2SC3352A 2SC3352A
TC=25°C Ta=25°C
VCBO
VCEO VEBO ICP IC IB
PC
Tj Tstg
(TC=25˚C).
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(Panasonic)
2SC3352, 2SC3352A
して、として、いますを
s
q q q q
s
s
*VCEO(sus)
(TC=25˚C)
2SC3352A 2SC3352A
TC=25°C Ta=25°C
VCBO
VCEO VEBO ICP IC IB
PC
Tj Tstg
(TC=25˚C).
2SC3353 - Power Transistor
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isc Silicon NPN Power Transistor
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DESCRIPTION
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·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation .
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2SC3353A - NPN Transistor
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isc Silicon NPN Power Transistor
2SC3353A
DESCRIPTION
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·Collector-Emiiter Sustaining Voltage-
: VCEO(SUS)= 500V(Min.)
·Low Collector Saturation.
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