2SC3356 Datasheet, Transistor, Renesas

2SC3356 Features

• Transistor
• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

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2SC3356

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Renesas ↗

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📄 Datasheet

Description:

Npn silicon rf transistor. Summary Previous No. :PU10209EJ02V0DS Modification of ORDERING INFORMATION Modification of hFE CLASSIFICATION All trademarks and reg

2SC3356 Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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2SC3356

Renesas

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