2SC3356 Datasheet - Renesas

2SC3356 NPN Silicon RF Transistor

Summary Previous No. :PU10209EJ02V0DS Modification of ORDERING INFORMATION Modification of hFE CLASSIFICATION All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is iss.

2SC3356 Features

* Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

* High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC3356 2SC3356-T1B Order Number 2SC3356-A 2SC3356-T1B-A Package Quantit

2SC3356-Renesas.pdf