2SC3357 - NPN EPITAXIAL SILICON RF TRANSISTOR

Renesas

2SC3357 Datasheet Preview — Preview of 2SC3357 PDF

Datasheet Details

Part number	2SC3357
Manufacturer	Renesas ↗
File Size	235.12 KB
Description	NPN EPITAXIAL SILICON RF TRANSISTOR
Datasheet	2SC3357_Renesas.pdf

2SC3357 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low noise and high gain NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz.
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz.
Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate).
Small package : 3-pin power minimold package.

📁 2SC3357 Similar Datasheet

2SC3352 - NPN Transistor (INCHANGE)
2SC3352A - NPN Transistor (Panasonic)
2SC3353 - Power Transistor (Inchange Semiconductor)
2SC3353A - NPN Transistor (INCHANGE)
2SC3354 - Silicon NPN Transistor (Panasonic Semiconductor)
2SC3355 - NPN Silicon Transistor (NEC)
2SC3356 - NPN Silicon Transistor (NEC)
2SC3356F - NPN Transistor (SeCoS Halbleitertechnologie GmbH)

Other Datasheets by Renesas

2SC3360 - NPN SILICON TRANSISTOR
2SC3365 - Silicon NPN Transistor
2SC3380 - Silicon NPN Triple Diffused Transistor
2SC3127 - Silicon NPN Epitaxial Transistor
2SC3512 - Silicon NPN Transistor
2SC3518 - Silicon Power Transistors

Published: Oct 29, 2013 |