2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR

Renesas

Description

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

📥 Download Datasheet

2SC3357 Datasheet Preview — Preview of 2SC3357 PDF

Datasheet Specifications

Part number: 2SC3357
Manufacturer: Renesas ↗
File Size: 235.12 KB
Datasheet: 2SC3357_Renesas.pdf
Description: NPN EPITAXIAL SILICON RF TRANSISTOR

Features

* Low noise and high gain NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
* High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
* Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 ×

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

2SC3357 Distributors

📁 Related Datasheet

2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355

📌 All Tags

2SC3357 NPN EPITAXIAL SILICON TRANSISTOR Renesas

Renesas 2SC3357-like datasheet