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2SC3355 - NPN Silicon Transistor

2SC3355 Description

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR .
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

2SC3355 Features

* Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
* High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX. ) 5.5 MAX.

2SC3355 Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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Datasheet Details

Part number
2SC3355
Manufacturer
NEC
File Size
102.16 KB
Datasheet
2SC3355_NEC.pdf
Description
NPN Silicon Transistor

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NPN Silicon Transistor NEC
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