Datasheet Specifications
- Part number
- 2SC3355
- Manufacturer
- NEC
- File Size
- 102.16 KB
- Datasheet
- 2SC3355_NEC.pdf
- Description
- NPN Silicon Transistor
Description
DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR .Features
* Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHzApplications
* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic2SC3355 Distributors
📁 Related Datasheet
📌 All Tags