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2SC3357 - NPN Silicon Transistor

2SC3357 Description

DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD .
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

2SC3357 Features

* Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
* Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V, 0.8 MIN. E 0.42 ±0.06 1.6±0.2 1.5±0.

2SC3357 Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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Datasheet Details

Part number
2SC3357
Manufacturer
NEC
File Size
77.51 KB
Datasheet
2SC3357_NEC.pdf
Description
NPN Silicon Transistor

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NPN Silicon Transistor NEC
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