C3650 Datasheet | Specifications & PDF Download

Ordering number : EN1780B 2SC3650 SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-P

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RoHS 2SC3650 2SC3650 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 1.2 A Collector-base voltage

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Elektronische Bauelemente 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES Small Flat Package. Large Current Capacity. High DC Curre

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Silicon Carbide Power Schottky Diode CDBJFSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device Features - Rated to 650V at 3 Amps - Short

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Production specification High hFE,Low-Frequency General-Purpose Amplifier Applications FEATURES Pb  High DC current gain. Lead-free  Low colle

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Ordering number : EN1780B 2SC3650 SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-P

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur

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2SC3650 SOT-89-3L TRANSISTOR (NPN) FEATURES  Small Flat Package  High DC Current Gain  Low VCE(sat)  Large Current Capacity APPLICATIONS  LF Amp

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Silicon Carbide Power Schottky Diode CDBJSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device Features - Rated to 650V at 3 Amps - Short

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