Ordering number : EN1780B 2SC3650 SANYO Semicondu.
GME
2SC3650 - General-Purpose Amplifier
Production specification High hFE,Low-Frequency General-Purpose Amplifier Applications FEATURES Pb High DC current gain. Lead-free Low colle.
Sanyo Semicon Device
2SC3650 - NPN Epitaxial Planar Silicon Transistor
Ordering number : EN1780B 2SC3650 SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-P.
SeCoS
2SC3650 - NPN Silicon Epitaxial Planar Transistor
Elektronische Bauelemente 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor FEATURES Small Flat Package. Large Current Capacity. High DC Curre.
WEJ
2SC3650 - NPN Transistor
RoHS 2SC3650 2SC3650 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 1.2 A Collector-base voltage .
Kexin
2SC3650 - Transistor
SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur.
Jin Yu Semiconductor
2SC3650 - Transistor
2SC3650 SOT-89-3L TRANSISTOR (NPN) FEATURES Small Flat Package High DC Current Gain Low VCE(sat) Large Current Capacity APPLICATIONS LF Amp.
Sanyo
C3650 - 2SC3650
Ordering number : EN1780B 2SC3650 SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-P.
Comchip
CDBJFSC3650-G - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode CDBJFSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device Features - Rated to 650V at 3 Amps - Short.
Comchip
CDBJSC3650-G - Silicon Carbide Power Schottky Diode
Silicon Carbide Power Schottky Diode CDBJSC3650-G Reverse Voltage: 650 V Forward Current: 3 A RoHS Device Features - Rated to 650V at 3 Amps - Short .