* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* Large current capacity (IC=1.2A).
* Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum Ratings at
2SC3650
Sanyo Semicon Device
65.81 KB
Npn epitaxial planar silicon transistor.
Ordering number : EN1780B
2SC3650
SANYO Semiconductors
DATA SHEET
2SC3650
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency General-P.
📁 Related Datasheet
2SC3650 - General-Purpose Amplifier
(GME)
Production specification
High hFE,Low-Frequency General-Purpose Amplifier Applications
FEATURES
Pb
High DC current gain.
Lead-free
Low colle.
2SC3650 - Transistor
(Kexin)
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC3650
Features
High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur.
2SC3650 - NPN Silicon Epitaxial Planar Transistor
(SeCoS)
Elektronische Bauelemente
2SC3650
1.2 A , 30 V NPN Plastic-Encapsulate Transistor
FEATURES
Small Flat Package. Large Current Capacity. High DC Curre.
2SC3650 - Transistor
(Jin Yu Semiconductor)
2SC3650
SOT-89-3L
TRANSISTOR (NPN)
FEATURES Small Flat Package High DC Current Gain Low VCE(sat) Large Current Capacity APPLICATIONS LF Amp.
2SC3650 - NPN Transistor
(WEJ)
RoHS 2SC3650
2SC3650 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM: 1.2 A Collector-base voltage
.
2SC3651 - NPN Transistor
(Sanyo Semicon Device)
Ordering number:EN1779A
NPN Epitaxial Planar Silicon Transistor
2SC3651
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
.
2SC3651 - Transistor
(Kexin)
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistors 2SC3651
Features
High DC current gain High breakdown voltage Low colleotor-to- emitter.
2SC3652 - SILICON NPN EPITAXIAL TRANSISTOR
(Hitachi Semiconductor)
2SC3652
Silicon NPN Epitaxial
Application
High frequency amplifier
Outline
TO-126 MOD
123
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings.
