2SC3650 Datasheet - Sanyo Semicon Device

2SC3650 NPN Epitaxial Planar Silicon Transistor

2SC3650 Features

* High DC current gain (hFE=800 to 3200).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* Large current capacity (IC=1.2A).

* Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications Absolute Maximum Ratings at

Datasheet Details

2SC3650

Sanyo Semicon Device

65.81 KB

Npn epitaxial planar silicon transistor.

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