TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT.
Toshiba
7
C3669 - 2SC3669
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm • Low.
UTC
3
2SC3669 - NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low.
Toshiba Semiconductor
1
2SC3669 - Silicon NPN Epitaxial Type TRANSISTOR
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm • Low.