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C3669 2SC3669

C3669 Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm <.

C3669 Features

* ns. Export and re-export of Product or related software or technology are strictly prohibited exc

C3669 Applications

* Power Switching Applications 2SC3669 Unit: mm
* Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
* High-speed switching: tstg = 1.0 μs (typ. )
* Complementary to 2SA1429 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collect

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2SC3669 Toshiba
Toshiba C3669-like datasheet