C3668 Datasheet - Toshiba

C3668 2SC3668

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3668 Power Amplifier Applications Power Switching Applications 2SC3668 Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 1000 mW High-speed switching: tstg = 1.0 μ (typ.) Complementary to 2SA1428. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage V.

C3668 Features

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C3668 Datasheet (141.99 KB)