Datasheet4U Logo Datasheet4U.com

2SC3669 Datasheet - Toshiba Semiconductor

2SC3669 Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1429 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector.

2SC3669 Features

* ns. Export and re-export of Product or related software or technology are strictly prohibited exc

2SC3669 Datasheet (143.80 KB)

Preview of 2SC3669 PDF

Datasheet Details

Part number:

2SC3669

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

143.80 KB

Description:

Silicon npn epitaxial type transistor.

📁 Related Datasheet

2SC3661 NPN Transistor (Sanyo Semicon Device)

2SC3661 Transistor (Kexin)

2SC3663 NPN EPITAXIAL SILICON TRANSISTOR (NEC)

2SC3663 Transistor (Kexin)

2SC3664 NPN Triple Diffused Planar Type Darlington Silicon Transistor (Sanyo Semicon Device)

2SC3665 NPN EPITAXIAL TYPE TRANSISTOR (Toshiba Semiconductor)

2SC3666 NPN EPITAXIAL TYPE TRANSISTOR (Toshiba Semiconductor)

2SC3668 Silicon NPN Epitaxial Type TRANSISTOR (Toshiba Semiconductor)

2SC3669 NPN EPITAXIAL SILICON TRANSISTOR (UTC)

2SC3600 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

TAGS

2SC3669 Silicon NPN Epitaxial Type TRANSISTOR Toshiba Semiconductor

Image Gallery

2SC3669 Datasheet Preview Page 2 2SC3669 Datasheet Preview Page 3

2SC3669 Distributor