* Fast speed (adoption of MBIT process).
* High breakdown voltage (VCBO=800V).
* High reliability (adoption of HVP process).
* On-chip damper diode. Package Dimensions unit:mm 2022A [2SC3664] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage
2SC3664
Sanyo Semicon Device
33.05 KB
Npn triple diffused planar type darlington silicon transistor.
Ordering number:EN2488 NPN Triple Diffused Planar Type Darlington Silicon Transistor 2SC3664 400V/20A Driver Applications Applications Inducti.
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