2SC3661 - NPN Transistor

Sanyo Semicon Device

Datasheet Details

Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer.
Adoption of FBET process.
High DC current gain (hFE=800 to 3200).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storag.

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Published: Mar 22, 2005 |