* Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer.
* Adoption of FBET process.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Specifications Absolute Maximum Rati
2SC3661
Sanyo Semicon Device
85.14 KB
Npn transistor.
Ordering number:EN1854A
NPN Epitaxial Planar Silicon Transistor
2SC3661
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
.
📁 Related Datasheet
2SC3661 - Transistor
(Kexin)
SMD Type
Transistors IC
NPN Epitaxial Planar Silicon Transistor 2SC3661
SOT-23
Unit: mm
Low frequency general-purpose amplifiers, drivers, muting .
2SC3663 - NPN EPITAXIAL SILICON TRANSISTOR
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURES
• Low-voltage, low-curre.
2SC3663 - Transistor
(Kexin)
SMD Type
NPN Epitaxial Silicon Transistor 2SC3663
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Low-voltage, low-current, .
2SC3664 - NPN Triple Diffused Planar Type Darlington Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN2488
NPN Triple Diffused Planar Type Darlington Silicon Transistor
2SC3664
400V/20A Driver Applications
Applications
· Induction c.
2SC3665 - NPN EPITAXIAL TYPE TRANSISTOR
(Toshiba Semiconductor)
2SC3665
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3665
Audio Power Amplifier Applications Driver-Stage Amplifier Applications
Un.
2SC3666 - NPN EPITAXIAL TYPE TRANSISTOR
(Toshiba Semiconductor)
.
2SC3668 - Silicon NPN Epitaxial Type TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3668
Power Amplifier Applications Power Switching Applications
2SC3668
Unit: mm
• Low.
2SC3669 - Silicon NPN Epitaxial Type TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications Power Switching Applications
2SC3669
Unit: mm
• Low.
