2SC3663 NPN EPITAXIAL SILICON TRANSISTOR

NEC

Description

DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION .

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Datasheet Specifications

Part number: 2SC3663
Manufacturer: NEC
File Size: 110.24 KB
Datasheet: 2SC3663_NEC.pdf
Description: NPN EPITAXIAL SILICON TRANSISTOR

Features

* Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. GA = 3.5 dB TYP. cordless phones, etc.
* Gold electrode gives high reliability.
* Mini mold package, ideal for hybrid ICs. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz @VCE = 1 V, IC = 250 PA, f = 1.0 GHz PACKAGE D

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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2SC3663 NPN EPITAXIAL SILICON TRANSISTOR NEC

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